Patil, S., Wen, B., Melnik, R.
Proceedings of the 27th International Conference on the Physics of Semiconductors, Rio de Janeiro, 2008, Physics of Semiconductors: 29th International Conference on the Physics of Semiconductors, American Institute of Physics (AIP Conference Proceedings), Volume 1199, pp. 303--304, 2010
We report strain and strain-induced piezoelectric effects in arbitrary shaped CdTe/ZnTe quantum wire (QWR) and temperature-dependent phase stability of CdS nanostructures. Strain field distributions are obtained by using analytical expressions derived from inclusion theory, whereasstrain-induced piezoelectric fields are obtained for rectangular box shaped CdTe/Znte QWR with a continuum model based on coupled electric and mechanical balance equations. CdTe/ZnTe QWRs are observed to be greatly relaxed despite of higher lattice mismatch. Strain-induced piezoelectric effect is relatively small. First principle molecular dynamic simulations are performed to determine the relative stability of wurtzite, graphitic and rocksalt phases of the CdS nanostructure at various temperatures. In the temperature range from 300 K to 450 K, the phase stability sequence for the CdS nanostructure is observed to be rocksalt, wurtzite and graphitic phase.
Keywords: semiconductor materials, phase transitions, quantum wires, piezoelectric effects; nanocrystalline materials, collective effects, quantum wires