Analysis of low-dimensional semiconductor nanosttructures with a self-consistent iterative scheme

Mahapatra, D.R. and Melnik, R.V.N.

Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, Eds. J.-C. Chiao, A.S. Dzurak, C. Jagadish and D.V. Thiel, Proc. of SPIE, Vol. 6415, 64150A-1 -- 64150A-4 (4 pages), ISSN 0277-786X, ISBN 9780819465238, Dec 11-13, 2006, Adelaide, Australia, 2006

Abstract:

In this contribution, we propose an iterative scheme for the solution of the coupled Poisson-Schrodinger system in a self-consistent manner. The developed methodology allows us to analyze the combined effects of piezoelectricity, spontaneous polarization, and the charge density in low-dimensional semiconductor nanostructures. These effects are analyzed on an example of a wurtzite type semiconductor heterojunction. It is shown that such effects may influence substantially the electronic states and quasi-Fermi level energies of the nanostructures, in particular when compared to one-step calculations based on the conventional scheme. A major emphasis is given to two different types of mechanical boundary conditions.

Keywords: interface boundary conditions; strain; semiconductor heterostructures; wide bandgap heterostructures; photonics; optoelectronics

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