Melnik, R.V.N. and Willatzen, M.
NanoTech-2002: Proc. of the Vth Int. Conf. on Modelling and Simulation of Microsystems [An Interdisciplinary Integrative Forum on Modeling, Simulation and Scientific Computing in the Microelectronic, Semiconductor, Sensors, Materials and Biotechnology Fields], Eds. M. Laudon, B. Romanowicz, USA, pp. 506--509, 2002
[Also referenced electronically as: Nanotech 2002 Vol. 2, Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology; Chapter 9: Quantum Effects, Quantum Devices and Spintronics, pp. 209-212, 2002, ISBN:0-9708275-6-3]
The influence of wetting-layer states on quantum-dot states and vice-versa is examined numerically employing a one-band model for electroncs in the conduction band. This problem corresponds to the case where a few monolayer InAs grown on GaAs(100) oriented substrates leads to self-assembly of quantum dots with wetting layers as is known experimentally. It is shown that the quantum-dot ground state of the combined structure is considerably affected by the presence of the wetting layer, and similarly, wetting-layer states are affected by the presence of the quantum dot. This quantum dot/wetting layer state interference is expected to have an impact on carrier-capture phenomena and operation speeds of electronic and optical devices using quantum dots as active regions.
Key words: quantum dots with wetting layers; coupling; envelope functions approximations; eigenvalue PDE problems; Hamiltonians; quantum confinement; numerical methods in quantum mechanics.
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